Selectivity enhancement in functionalization of C-H bonds: A review.
Selective dry etching of III-V nitrides in Cl{sub 2}/Ar, CH{sub 4}/H{sub 2}/Ar, ICi/Ar, and IBr/Ar
GaN: Processing, defects, and devices
Influence of pore-size distribution of diffusion layer on mass-transport problems of proton exchange membrane fuel cells
Ion‐implanted GaN junction field effect transistor
AlGaN/GaN quantum well ultraviolet light emitting diodes
Electrical effects of plasma damage in p-GaN
Ion‐implanted GaN junction field effect transistor
Inductively coupled plasma etching of GaN
Dry etch damage in InN, InGaN, and InAlN